On the intensity dependence of the photoconductivity in a-SI:H
- 31 July 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 47 (2), 107-110
- https://doi.org/10.1016/0038-1098(83)90619-1
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- Photoconductivity, trapping, and recombination in discharge-produced, hydrogenated amorphous siliconPhysical Review B, 1981
- Characterized of glow-discharge deposited a-Si:HSolar Energy Materials, 1980
- Exponential absorption edge in hydrogenated α-Si filmsSolid State Communications, 1980
- Electron drift mobility in hydrogenated a-SiApplied Physics Letters, 1980
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977
- Electronic transport and state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972