Complete collection of minority carriers from the inversion layer in induced junction diodes
- 1 July 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (7), 4879-4881
- https://doi.org/10.1063/1.329295
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Silicon photodiode front region collection efficiency modelsJournal of Applied Physics, 1980
- Theory of the electronic structure of the Si-SiinterfacePhysical Review B, 1980
- Silicon UV-Photodiodes Using Natural Inversion LayersPhysica Scripta, 1978
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977