The optical properties of luminescence centres in silicon
- 1 May 1989
- journal article
- review article
- Published by Elsevier in Physics Reports
- Vol. 176 (3-4), 83-188
- https://doi.org/10.1016/0370-1573(89)90064-1
Abstract
No abstract availableKeywords
This publication has 223 references indexed in Scilit:
- Complex isotope splitting of the no-phonon lines associated with exciton decay at a four-lithium-atom isoelectronic centre in siliconPhysica B+C, 1983
- Excitation spectroscopy in silicon: Pseudo-acceptor excited states of the isoelectronic A, B, C exciton systemPhysica B+C, 1983
- Optical studies of vibronic bands in siliconPhysica B+C, 1983
- Origin of the 0.97 eV luminescence in irradiated siliconPhysica B+C, 1983
- Photoluminescence from Si irradiated with 1.5-MeV electrons at 100 °KJournal of Applied Physics, 1976
- Threshold energy determination in thick semiconductor samplesRevue de Physique Appliquée, 1976
- Recombination luminescence from electron-irradiated Li-diffused SiJournal of Applied Physics, 1973
- Temperature, stress, and annealing effects on the luminescence from electron-irradiated siliconJournal of Applied Physics, 1973
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967
- Eine charakteristische Absorptionserscheinung des DiamantenAnnalen der Physik, 1891