Anomalous polarization in the photoluminescence from Si-dopedquantum-well samples
- 15 September 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (6), 3645-3647
- https://doi.org/10.1103/physrevb.28.3645
Abstract
The low-temperature photoluminescence observed with the use of circular-polarization excitation and detection techniques shows that GaAs-AlGaAs multiquantum-well structures grown by molecular beam epitaxy with -type, i.e., Si-doped, quantum wells can exhibit highly polarized luminescence. Most striking is the observation that with increasing Si doping, the circular polarization of the luminescence at 5 K with resonant excitation of the heavy-hole exciton decreases markedly and, in fact, becomes opposite to that of the excitation for . When the temperature is increased to ≅20 K, the reduced and negative polarization effects are no longer present.
Keywords
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