Er 3 + excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx
- 17 July 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (3), 031116
- https://doi.org/10.1063/1.2227637
Abstract
Despite the observation by a number of groups of a strong luminescence sensitization effect of erbiumions by excitation exchange from siliconnanoclusters, there is considerable experimental evidence that the fraction of Er ions excited by Si-nc is actually very low for much of the material reported. In this work, we examine the evidence and point out that Er excited state absorption is the likely cause.Keywords
This publication has 13 references indexed in Scilit:
- Excited state absorption in the Si nanocluster-Er material systemIEEE Photonics Technology Letters, 2005
- Sensitization of Er luminescence by Si nanoclustersPhysical Review B, 2004
- Optimized conditions for an enhanced coupling rate between Er ions and Si nanoclusters for an improved 1.54-μm emissionJournal of Applied Physics, 2004
- Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded inPhysical Review B, 2003
- The characteristic carrier–Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputteringApplied Physics Letters, 2003
- Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanismsJournal of Applied Physics, 2002
- Gain limiting processes in Er-doped Si nanocrystal waveguides in SiO2Journal of Applied Physics, 2002
- Exciton–erbium interactions in Si nanocrystal-doped SiO2Journal of Applied Physics, 2000
- Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of OxygenPhysical Review Letters, 1999
- Photoluminescence from SiO2 films containing Si nanocrystals and Er: Effects of nanocrystalline size on the photoluminescence efficiency of Er3+Journal of Applied Physics, 1998