Model calculation of the electronic structure of a (111) surface in a diamond-structure solid
- 21 January 1975
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 8 (2), 147-157
- https://doi.org/10.1088/0022-3719/8/2/009
Abstract
The authors present exact results for a model calculation of the surface electronic structure of a (111) face of a diamond-type solid. The model contains only one s-state per atom, but allows for surface rearrangement both at the outer layer and at the outer bounds. Two kinds of surface states are found. The first kind are localized at the outer bounds and split off the bulk bands as the bond potential increases beyond a critical value. The second kind are intrinsic surface states and exist independently of the surface rearrangement but only in a restricted domain in the Brillouin zone where structure factors are smaller than 1. These intrinsic states have not been discussed before; they exist also in more realistic hybrid models of diamond-structure solids.Keywords
This publication has 23 references indexed in Scilit:
- Pseudopotential calculation of the surface band structure of Si(111) facesJournal of Physics C: Solid State Physics, 1974
- Surface Potential, Charge Density, and Ionization Potential for Si(111)-a Self-Consistent CalculationPhysical Review Letters, 1974
- Bond-Orbital Model and the Properties of Tetrahedrally Coordinated SolidsPhysical Review B, 1973
- Self-Consistent Pseudopotential for SiPhysical Review B, 1973
- Surface States and Surface Bonds of Si(111)Physical Review Letters, 1973
- Electronic surface states in GeJournal of Physics C: Solid State Physics, 1972
- Optical Absorption of Surface States in Ultrahigh Vacuum Cleaved (111) Surfaces of Ge and SiPhysical Review B, 1971
- Surface bands of silicon (111) slabs by a LCAO methodSurface Science, 1970
- The Fitting of Pseudopotentials to Experimental Data and Their Subsequent ApplicationPublished by Elsevier ,1970
- Character tables for two space groupsJournal of the Franklin Institute, 1942