Measurements of multiplication effects on noise in silicon avalanche diodes

1 January 1968

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 56 (11), 2051-2052
https://doi.org/10.1109/PROC.1968.6783

Abstract

Fine grain measurements of avalanche multiplication and noise in large area uniform silicon avalanche diodes are discussed. A high resolution apparatus is described which is capable of resolving multiplication noise in regions separated by only 10^-4inches (∼2.5 microns) and recording this noise as a function of position over the entire diode area.

Keywords

NOISE MEASUREMENT
SILICON
DIODES
NOISE GENERATORS
PHASE MEASUREMENT
CHARGE CARRIER PROCESSES
CURRENT DENSITY
LIGHT SOURCES
LASER BEAMS
MICROSCOPY

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