n-channel MOS transistors in mercury—cadmium—telluride

Abstract

N-channel MOS transistors operating at 77 K have been realized in Hg0.71Cd0.29Te with ion-implanted source and drain junctions. Enhancement-mode transistors were made with evaporated ZnS as a gate insulator, and depletion-mode transistors were made using a native oxide of mercury-cadmium-telluride. The devices exhibit surface mobility as high as 1.5 × 104cm2. V-1. s-1. Current-voltage characteristics and capacitance-voltage data are presented and analyzed.