Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon
- 13 October 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (15), 957-959
- https://doi.org/10.1063/1.97494
Abstract
Annealing of metastable dangling bond defects in light-soaked undoped hydrogenated amorphous silicon (a-Si:H) is investigated in samples which have been illuminated at different temperatures. Based on a monomolecular annealing model, the distribution of activation energies is determined. The annealing distribution narrows and shifts to higher energies as the temperature during illumination is increased.Keywords
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