Thin SiO2 films nitrided by rapid thermal processing in NH3 or N2O for applications in EEPROMs
- 1 October 1994
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 25 (7), 539-551
- https://doi.org/10.1016/0026-2692(94)90039-6
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Numerical transient simulation of the programming window degradation in FLOTOX EEPROM cellsSolid-State Electronics, 1993
- Optimization of Thin Si Oxynitride Films Produced by Rapid Thermal Processing for Applications in EEPROMsJournal of the Electrochemical Society, 1993
- Oxynitiride gate dielectrics prepared by rapid thermal processing using mixtures of nitrous oxide and oxygenApplied Physics Letters, 1992
- High Quality Ultrathin Gate Dielectrics Formation by Thermal Oxidation of Si in N 2 OJournal of the Electrochemical Society, 1991
- Trapping and trap creation studies on nitrided and reoxidized-nitrided silicon dioxide films on siliconJournal of Applied Physics, 1991
- Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2OApplied Physics Letters, 1990
- Nitridation of thin SiO2 films in N2 and NH3 plasmasApplied Surface Science, 1987
- Trap generation and occupation dynamics in SiO2 under charge injection stressJournal of Applied Physics, 1986
- Low Pressure Nitrided‐Oxide as a Thin Gate Dielectric for MOSFET'sJournal of the Electrochemical Society, 1983
- Slow and fast states induced by hot electrons at Si-SiO2 interfaceJournal of Applied Physics, 1982