Improved value for the silicon intrinsic carrier concentration at 300 K
- 16 July 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (3), 255-257
- https://doi.org/10.1063/1.103707
Abstract
A recent review suggests that the commonly cited value of 1.45×1010 cm−3 for the silicon intrinsic carrier concentration at 300 K is inconsistent with the best experimental and theoretical results. An alternative value of 1.08×1010 cm−3 was suggested. A new experimental measurement of 1.01×1010 cm−3 is reported with an estimated one standard deviation uncertainty of only 3%. This appears to be the most accurate experimental determination of this parameter at any temperature.Keywords
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