Growth and characterization of Al2O3 insulator gate on p-InP and p-Si by metallorganic chemical vapour deposition at low temperatures
- 1 January 1992
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 27 (20), 5531-5535
- https://doi.org/10.1007/bf00541617
Abstract
No abstract availableKeywords
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