Abstract
The ionisation alpha /p0, electron attachment eta /p0 and effective ionisation alpha /p0(= alpha /p0- eta /p0) coefficients for monosilane (SiH4) and disilane (Si2H6) were measured by the steady-state Townsend method for 600150 V cm-1 Torr-1 and found to be less than 10-5.
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