Optical and structural investigation of SiGe/Si quantum wells
- 4 May 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (18), 2183-2185
- https://doi.org/10.1063/1.107073
Abstract
In this letter we report photoluminescence and structural results obtained on asymmetrically strained Si0.7Ge0.3/Si single and multiple quantum wells epitaxially grown by low pressure chemical vapor deposition. Well‐resolved peaks were obtained which can be attributed to quantum well excitons and their transversal optical phonon replica. A good correlation between peak properties and structure results was found. From the photoluminescence peak energies a valence band offset of 0.27 eV and an effective hole mass of 0.25 were estimated.Keywords
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