Determination of the channel temperature in a GaAs MESFET from the emission transients of deep traps
- 30 June 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (6), 551-555
- https://doi.org/10.1016/0038-1101(81)90075-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- A surface temperature limit detector using nematic liquid crystals with an application to microcircuitsJournal of Physics E: Scientific Instruments, 1974
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Electron and Phonon Scattering in GaAs at High TemperaturesPhysical Review B, 1965