Electron Spin Resonance Studies in SiC
- 15 November 1961
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 124 (4), 1083-1089
- https://doi.org/10.1103/physrev.124.1083
Abstract
Electron spin resonance studies have been made on boron and nitrogen as impurities in silicon carbide. It is concluded that both impurities substitute for carbon and that they occupy the three nonequivalent carbon sites with equal probability. Hyperfine structure is well resolved for both species. The pattern for boron occupying one site is unusual in that the hyperfine splitting vanishes when the applied field is about 50° from the hexagonal axis of the crystal. The nitrogen hyperfine structure is interpretable in terms of some character for the unpaired electron, while the boron hyperfine structure indicates predominantly character.
Keywords
This publication has 15 references indexed in Scilit:
- Paramagnetic Resonance Absorption from Acceptors in SiliconPhysical Review Letters, 1960
- New Electron Spin Resonance Spectrum in Antimony-Doped GermaniumPhysical Review Letters, 1960
- Spin Resonance of Transition Metals in SiliconPhysical Review B, 1960
- Electron-Spin Resonance of Nitrogen Donors in DiamondPhysical Review B, 1959
- Electron Spin Resonance Experiments on Shallow Donors in GermaniumPhysical Review Letters, 1959
- Solubility of Carbon in Silicon and GermaniumThe Journal of Chemical Physics, 1959
- Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance TechniquePhysical Review B, 1959
- Electron Spin Resonance in Nickel-Doped GermaniumPhysical Review B, 1959
- Hyperfine Splitting of Donor States in SiliconPhysical Review B, 1955
- Theory of the nuclear hyperfine structure of paramagnetic resonance spectra in crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1951