Measurements of the channeling effect in sputtering
- 1 January 1973
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 20 (1-2), 81-88
- https://doi.org/10.1080/00337577308232270
Abstract
Single crystals of germanium and indium antimonide, rotated about axes normal to their surfaces were bombarded with 5–15 keV inert gas ions. The resultant variation of the sputtering yield with the angle of ion incidence was followed by means of a modulated mass spectrometric technique capable of monitoring one or more masses in the form of sputtered neutrals and/or secondary ions. Critical angles for channeling, relative reductions in yield and transparency ratios were calculated from the data. The experimental results were compared with predictions of the Onderdelinden and transparency models of sputtering.Keywords
This publication has 10 references indexed in Scilit:
- Sputtered atom ejection from Ge and the annealing of ion bombardment induced disorderRadiation Effects, 1971
- Annealing of ion bombardment damage in GePhysics Letters A, 1970
- Dependence of the sputtering yield on focussing chainlengthNuclear Instruments and Methods, 1970
- Directional effects of sputtering of a single gold crystal under bombardment by heavy ionsCanadian Journal of Physics, 1969
- Single-crystal sputtering including the channeling phenomenonCanadian Journal of Physics, 1968
- EFFECT OF TEMPERATURE ON THE PENETRATION OF HEAVY keV IONS IN MONOCRYSTALLINE SOLIDS: I. 133Xe IONS IN GOLDCanadian Journal of Physics, 1967
- Sputtering of a gold hemispherical single crystalPhilosophical Magazine, 1967
- Angular dependent sputtering of copper single crystals by 20 keV noble gas ionsPhysica, 1964
- Sputtering Yields of Single Crystals Bombarded by 1- to 10-keV Ar+ IonsJournal of Applied Physics, 1963
- Long-Range Channeling Effects in Irradiated CrystalsJournal of Applied Physics, 1963