Microwave characterisation of 1 μm-gate AI0.48In0.52As/Ga0.47In0.53As/InP MODFETs

Abstract

We report microwave characterisation of nominally 1μm-gate AI_0.48In_0.52As/Ga_0.47In_0.53As (lattice-matched to InP) modulation-doped field-effect transistors (MODFETs). The AI_0.48In_0.52As/Ga_0.47In_0.53As MODFETs have room-temperature extrinsic transconductances as high as 250 mS/ mm. A room-temperature unity-current-gain cutoff frequency (f_T) of 22 GHz and an f_max of 35 GHz were measured for a 1.2μm-gate MODFET.