Room-temperature continuous-wave operation of short-wavelength GaInP/AlGaInP laser grown on (511)A GaAs substrate by metalorganic vapour phase epitaxy

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Abstract
GaInP/AlGaInP gain-guided lasers on (511)A GaAs substrates are shown to lase at a short wavelength corresponding to the absence of bandgap shrinkage of crystals grown on this substrate. Some properties of this laser under roomtemperature CW operation are reported.