Collisional broadening and shift of spectral lines in quantum dot lasers
- 24 May 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (21), 3081-3083
- https://doi.org/10.1063/1.124068
Abstract
We estimate homogeneous broadening and shift of optical transition lines in self-assembled quantum dots (SAQD) caused by elastic Coulomb collisions of carriers in wetting layer with carriers in the SAQD. In particular, we demonstrate that the dephasing time for lasing transitions can be ∼0.1–1 ps at carrier densities in wetting layer ∼1015 m−2.Keywords
This publication has 8 references indexed in Scilit:
- Temperature dependence of microscopic photoluminescence spectra of quantum dots and quantum wellsPhysica E: Low-dimensional Systems and Nanostructures, 1998
- Auger carrier capture kinetics in self-assembled quantum dot structuresApplied Physics Letters, 1998
- Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layerIEEE Journal of Selected Topics in Quantum Electronics, 1997
- InGaAs-GaAs quantum-dot lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Rapid carrier relaxation in self-assembledAs/GaAs quantum dotsPhysical Review B, 1996
- Quantum-confined Stark effects in semiconductor quantum disksIEEE Journal of Quantum Electronics, 1996
- Analyses of localized confinement potential in semiconductor strained wires and dots buried in lattice-mismatched materialsJournal of Applied Physics, 1994
- Electron relaxation in quantum dots by means of Auger processesPhysical Review B, 1992