Characterization of grain boundary in polycrystalline n-InP grown by the gradient freeze method
- 31 January 1989
- journal article
- Published by Elsevier in Materials Letters
- Vol. 7 (9-10), 359-362
- https://doi.org/10.1016/0167-577x(89)90026-8
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Grain size dependence of mobility in polycrystalline n-indium phosphideJournal of Applied Physics, 1983
- Theory of the electrical and photovoltaic properties of polycrystalline siliconJournal of Applied Physics, 1980