Complementary MOS transistors
- 31 October 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (10), 991-1008
- https://doi.org/10.1016/0038-1101(66)90075-x
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Simple Physical Model for the Space-Charge Capacitance of Metal-Oxide-Semiconductor StructuresJournal of Applied Physics, 1964
- Characteristics of the metal-Oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1964
- Field Effect‐Capacitance Analysis of Surface States on SiliconPhysica Status Solidi (b), 1963
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962
- Semiconductor Surface VaractorBell System Technical Journal, 1962
- Some effects of material parameters on the design of surface space-charge varactorsSolid-State Electronics, 1961
- Stabilization of Silicon Surfaces by Thermally Grown Oxides*Bell System Technical Journal, 1959
- Physical Theory of Semiconductor SurfacesPhysical Review B, 1955
- Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a SemiconductorJournal of Applied Physics, 1955