Photoluminescence studies of band-bending in hydrogenated amorphous silicon thin films
- 30 March 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (9), 1363-1371
- https://doi.org/10.1088/0022-3719/14/9/020
Abstract
Large thermal and optical history effects on the conductivity of a-Si:H films are well known. By studying the quenching of luminescence at very low excitation densities, the author shows that in his samples the results are such as to confirm the band-bending model of these effects.Keywords
This publication has 6 references indexed in Scilit:
- Effect of adsorbates and insulating layers on the conductance of plasma deposited a-Si:HJournal of Non-Crystalline Solids, 1980
- Light-induced aging effects in Schottky diodes on sputtered hydrogenated amorphous silicon (a-SiH) : interpretation of the photovoltaic stabilityJournal of Non-Crystalline Solids, 1980
- Photo-induced changes in glow-discharge-deposited amorphous silicon: The Staebler-Wronski effectPhilosophical Magazine Part B, 1979
- Effect of adsorbed gases on the conductance of amorphous films of semiconducting silicon-hydrogen alloysApplied Physics Letters, 1978
- Luminescence studies of plasma-deposited hydrogenated siliconPhysical Review B, 1978
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977