A unified treatment of semiconductor boundary value problems

Abstract

A unified approach to the solution of semiconductor boundary value problems is presented. The terminal voltage (including bulk drops) is derived by taking the total current as the independent variable. At semiconductor interfaces relationships between potential drops and carrier concentrations in the neutral regions are reviewed in terms of both the electrostatic and electrochemical potentials. The terminal voltage is expressed in terms of either the electrostatic or electrochemical potentials. Examples are presented to illustrate the techniques presented in this paper in terms of the familiar RP+NR and not so familiar RvNR diodes.