Quantitative Auger analysis of ion-implanted boron and arsenic in polycrystalline silicon
- 2 December 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 61 (2), 435-442
- https://doi.org/10.1016/0039-6028(76)90056-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Quantitative Auger electron spectroscopy using elemental sensitivity factorsJournal of Vacuum Science and Technology, 1976
- A first order approximation to quantitative auger analysis in the range 100 to 1000eV using the CMA analyzerSurface Science, 1975
- General formalism for quantitative Auger analysisSurface Science, 1975
- Detectability limits for boron and phosphorus in silicon by Auger electron spectroscopy (AES)Surface Science, 1974
- Consideration of L-Shell Ionization Cross Sections in Auger Electron SpectroscopyJournal of Vacuum Science and Technology, 1973