Minority carrier lifetime in highly doped Ge
- 1 February 1972
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 10 (3), 321-323
- https://doi.org/10.1016/0038-1098(72)90016-6
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Identification of Auger Electrons in GaAsPhysical Review Letters, 1971
- Recombination in strongly excited siliconSolid State Communications, 1971
- Auger recombination in heavily doped p-type GaAsSolid State Communications, 1969
- Indirekte Band-Band-Stoßrekombination in GermaniumThe European Physical Journal A, 1968
- Indirect Band-to-Band Auger Recombination in GePhysical Review Letters, 1968
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952