HIGH CONDUCTIVITY p-TYPE CdS
- 15 May 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 12 (10), 339-341
- https://doi.org/10.1063/1.1651843
Abstract
High conductivity p‐type CdS was formed by ion implanting Bi into n‐type single crystals. Hall measurements and lifetime studies were performed on the implanted layers. p‐n junctions were formed in high conductivity n‐type material and light emission observed in the forward direction. By making two independent contacts to the p‐type layer and measuring their I‐V characteristics, it was determined that they were not rectifying.Keywords
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