GaInO3: A new transparent conducting oxide

Abstract

GaInO₃, a layered material with the β Ga₂O₃ crystal structure, can be doped with electrons through the introduction of oxygen deficiency, Sn doping for In, or Ge doping for Ga. At atomic doping levels of 10% or less, resistivities as low as 3 mΩ cm are obtained. In contrast to polycrystalline indium tin oxide (ITO), which is distinctly green, conductive gallium indium oxide is light grey with no visible coloration. Thin films of doped GaInO₃ display good transparency over the whole optical window, superior to that of ITO in the green‐blue region.