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Design of short-channel ion-implanted mosfets with relatively deep junctions
Home
Publications
Design of short-channel ion-implanted mosfets with relatively deep junctions
Design of short-channel ion-implanted mosfets with relatively deep junctions
WJ
W. S. Johnson
W. S. Johnson
PP
P. P. Peressini
P. P. Peressini
KC
K. H. Christie
K. H. Christie
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1 December 1974
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1974.6219809
Abstract
No abstract available
Keywords
SHORT CHANNEL EFFECT
LOGIC GATES
ION IMPLANTATION
THRESHOLD VOLTAGE
Cited by 6 articles