Inelastic tunneling in AlAs-GaAs-AlAs heterostructures
- 12 September 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (11), 977-979
- https://doi.org/10.1063/1.100046
Abstract
Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the XAlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.Keywords
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