Conduction and charge trapping in polysilicon-silicon nitride-oxide-silicon structures under positive gate bias
- 1 April 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (4), 459-467
- https://doi.org/10.1109/16.2480
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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