Atomic Layer Epitaxy of Vanadium Oxide Thin Films and Electrochemical Behavior in Presence of Lithium Ions

Abstract

Vanadium oxide films have been deposited by atomic layer epitaxy (ALE) at temperatures ranging from 50 to from vanadyl triisopropoxide and water precursors. The growth mechanism was studied in situ by quartz crystal microgravimetry allowing us to distinguish different growth regimes. ALE growth extends from near room temperature to . For higher temperatures there was a change in the ALE regime, followed by a different chemical vapor deposition regime involving the direct decomposition of the vanadium precursor at temperatures higher than ca. . As‐grown films were amorphous and crystallized easily during thermal post‐treatments. Films annealed at offered excellent electrochemical stability and cyclability for lithium ion insertion/deinsertion between 3 and . ©2000 The Electrochemical Society