Band tailing in heavily doped semiconductors. Scattering and impurity-concentration-fluctuation effects
- 15 February 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 23 (4), 1971-1976
- https://doi.org/10.1103/physrevb.23.1971
Abstract
Using a self-consistent multiple-scattering method, we estimate the relative importance of both effects of scattering and of impurity-concentration fluctuations on band states in heavily doped semiconductors and thus we account for band tailing. We apply this formalism to the estimate of the interband absorption spectrum in a typical case, in satisfactory agreement with experiment.Keywords
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