AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition

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Abstract
Single and multiple quantum wells with well widths ranging from 10 to 135 Å were grown by atmospheric pressure organometallic chemical vapor deposition and characterized by photoluminescence (PL) and electrical measurements. Compared with single layers of high-purity GaAs and AlGaAs which have high intensity near band-edge excitonic transitions, the quantum well (QW) structures exhibit very strong luminescence of the discrete QW eigenstates. The intense QW signals indicate that the carrier confinement efficiency of the wells is very high, which is also supported by significant mobility enhancement in the samples. The sharp PL lines suggest high quality and smoothness of the well interfaces.