A model for the growth of cdte by metal organic chemical vapor deposition
- 1 October 1991
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (10), 609-613
- https://doi.org/10.1007/bf02669525
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A model for high temperature growth of CdTe by metal organic chemical vapor depositionJournal of Electronic Materials, 1991
- A model for the determination of the solid composition of ternary III-V and II-VI metalorganic chemical vapor deposition epilayersJournal of Applied Physics, 1990
- MOVPE of narrow and wide gap II–VI compoundsJournal of Crystal Growth, 1990
- Photo-MOCVD growth of HgTe-CdTe superlatticesJournal of Crystal Growth, 1988
- On the Mechanism of Growth of CdTe by Organometallic Vapor‐Phase EpitaxyJournal of the Electrochemical Society, 1987
- Kinetics of Silicon Growth under Low Hydrogen PressureJournal of the Electrochemical Society, 1978