Electronic transport in molecular-beam-epitaxy-grownAlxGa1−xAs

Abstract

We have studied magnetotransport and cyclotron resonance of electrons in interfacial subbands of a series of remote-doped ${\mathrm{Al}}_{0.35}$ ${\mathrm{Ga}}_{0.65}$As-${\mathrm{Al}}_{\mathrm{x}}$Ga ${}_{1\mathrm{-}x}{}^{}{}_{}{}^{}$As heterostructures with x up to 0.26. The experiments allow an accurate determination of $m_c^{\mathrm{*}}$(x) and define an upper limit of the strength of the alloy disorder scattering.