Spectroscopic studies of Si v and Si vI between 500 and 1300 Å using the beam-foil method*

Abstract

The spectrum of Si v has been observed between 500 and 1300 Å using beam-foil excitation. Transitions in the 3s-3p, 3p-3d, and 3p-4s arrays have been identified and the first experimental lifetime results are presented for 9 levels. Theoretical gƒ values have been calculated for all the observed transitions, and the derived lifetime values are compared with the experimental results. For the first time, lifetime results are also presented for 3d4D and 3d4F levels in Si vi.