GaAs: Si LED Pumped Yb-Doped YAG Laser
- 1 July 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (1), 11-13
- https://doi.org/10.1063/1.1653723
Abstract
A GaAs: Si light‐emitting‐diode (LED) pumped 1.03‐μm laser employing a YAG: Yb laser rod has been constructed with the rod and LED's cooled at ∼80 K. Pulsed operation with a peak laser power of 0.7 W is observed.Keywords
This publication has 1 reference indexed in Scilit:
- COHERENT OSCILLATIONS FROM Tm3+, Ho3+, Yb3+ and Er3+ IONS IN YTTRIUM ALUMINUM GARNETApplied Physics Letters, 1965