Efficiency Measurements on GaAs Electroluminescent Diodes

Abstract

An integrating sphere was adapted to measurement of external efficiencies of GaAs injection lasers. External efficiencies rise rather sharply with current once the laser threshold is reached, attaining ultimate values of about 35% at 77°K for the more efficient diodes, as high as 60% at 20°K. On the basis of a highly simplified model, the observed external efficiencies indicate junction efficiencies near unity.