An Investigation of the Potential of MOS Transistor Memories
- 1 August 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electronic Computers
- Vol. EC-15 (4), 423-427
- https://doi.org/10.1109/pgec.1966.264348
Abstract
The design and performance characteristics of a 128X64 MOS transistor memory is given. The storage cell used operates with a low standby power, 0.1 mW. The memory operates with a 12-ns access time, 35-ns read cycle time, and a 60-ns write cycle time.Keywords
This publication has 1 reference indexed in Scilit:
- A 150-nanosecond associative memory using integrated MOS transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1966