High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs
- 1 January 1997
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2:1 multiplexer for high-speed optical-fiber links are presented. The ICs featuring differential configuration were fabricated in a 0.2 mu m gate-length enhancement and depletion HEMT technology with 60 GHz and 55 GHz integral of T. The modulator driver operates up to 25 Gb/s with an output voltage swing of 3.3 V(P-P) at each output (corresponding to an internal current swing of 100 mA). The total voltage gain is 22 dB. The modulator driver with a integrated 2:1 multiplexer performs a data rate up to 30 Gb/s with an output voltage swing of 2.2 V(P-P) at each output. Each circuit consumes 1.4 W power using a single supply voltage of -5 VKeywords
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