Modelling of charging effects in plasma immersion ion implantation
- 1 March 1995
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 96 (1-2), 435-439
- https://doi.org/10.1016/0168-583x(94)00535-4
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Analytical modeling of plasma immersion ion implantation target current using the SPICE circuit simulatorJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Wafer charging monitored by high frequency and quasi-static C−V measurementsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Model for oxide damage from gate charging during magnetron etchingApplied Physics Letters, 1993
- Thin-oxide damage from gate charging during plasma processingIEEE Electron Device Letters, 1992
- Model of plasma immersion ion implantation for voltage pulses with finite rise and fall timesJournal of Applied Physics, 1991
- Thin oxide charging current during plasma etching of aluminumIEEE Electron Device Letters, 1991
- Model of plasma immersion ion implantationJournal of Applied Physics, 1989
- Electron emission from glow-discharge cathode materials due to neon and argon ion bombardmentJournal of Applied Physics, 1989
- Time-dependent dielectric breakdown of ultra-thin silicon oxideIEEE Electron Device Letters, 1987