Influence of Gap States on Basic Characteristics of a-Si:H Thin Film Transistors
- 1 May 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (5A), L315-317
- https://doi.org/10.1143/jjap.21.l315
Abstract
The static characteristics of hydrogenated amorphous silicon thin-film transistors are theoretically studied based on the analysis of field effect in a-Si:H MOS structures. The TFT characteristics are obtained for typical cases of the gap state density distributions and the results showed that the slope of the state density distribution near and above the Fermi-level is a key factor to determine the on/off current ratio of a-Si:H TFTs.Keywords
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