Threshold-voltage sensitivity of ion-implanted m.o.s. transistors due to process variations
- 1 January 1974
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 10 (9), 151-152
- https://doi.org/10.1049/el:19740115
Abstract
Adjustment of the threshold voltage VT by ion implantation yields a certain distribution of threshold voltages determined by different process parameters. A procedure is presented for minimising the threshold-voltage sensitivity of implanted m.o.s. transistors due to these parameters for a typical set of process parameters.Keywords
This publication has 1 reference indexed in Scilit:
- Distribution of Boron Implanted SiliconPublished by Springer Nature ,1971