Absorption of Oxygen in Silicon in the Far Infrared

Abstract

An absorption line of oxygen in silicon has been observed at 29.3 ${\mathrm{cm}}^{-1\mathrm{}}$ at 1.8°K. Assignment to oxygen has been confirmed by observation of the oxygen isotope effect. Effects of uniaxial stress on the line have been measured. Additional lines observed at 37.7, 43.5, and 48.9 ${\mathrm{cm}}^{-1\mathrm{}}$ when the crystals are heated to 35°K are assigned to a bending vibrational mode of ${\mathrm{Si}}_2$O.