Layer-thickness dependence of cw photoluminescence in singlea−Si:Hlayers

Abstract

Photoluminescence data are presented for ultrathin single layers of $a-\mathrm{Si}:\mathrm{H}$ deposited on $a-\mathrm{Si}{\mathrm{O}}_2$. We observe a nonmonotonic shift of the luminescence peak with layer thickness, indicating that more than one mechanism is operative. Possible sources of the opposing shifts are discussed.