Gate-length dependence of the speed of SSI circuits using submicrometer selectively doped heterostructure transistor technology
- 1 May 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (5), 543-547
- https://doi.org/10.1109/T-ED.1986.22530