Kondo lattice mixed valence behavior in the Ce(SnxPb1−x)3 system
- 1 November 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (11), 7910-7912
- https://doi.org/10.1063/1.330272
Abstract
Measurements of the electrical resistivity versus x and temperature T, for 1.5≤T≤300 K for the fcc system Ce(SnxPb1−x)3 are reported. CeSn3 has been shown to be a strongly mixed valent system with an average occupation number of the Ce 4f level nf of ∼0.4 at low temperatures. The electrical resistivity for Ce(SnxPb1−x)3 is compared to that obtained for other Ce based mixed valent–trivalent systems and to the predictions of the Newns and Hewson theory. These comparisons suggest that Ce(SnxPb1−x)3 is mixed valent for x≳0.5 and the scaling of the resistivity supports the previous result that CeSn3 is strong mixed valent with nf≂0.4.Keywords
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