A 2.7-5.5 V, 0.2-1 W BiCMOS RF driver amplifier IC with closed-loop power control and biasing functions
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 33 (12), 2259-2264
- https://doi.org/10.1109/4.735711
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Single polysilicon layer advanced super high-speed BiCMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 1 W 830 MHz monolithic BiCMOS power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 2.5-V, 1-W monolithic CMOS RF power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002