Epitaxial silicon p-n junctions on polycrystalline ``ribbon'' substrates

Abstract

Silicon epitaxial layers have been deposited on polycrystalline silicon ``ribbon'' substrates. It is shown that the epitaxial layer is structurally much superior to the substrate material. Good quality p‐n junctions have been epitaxially grown on these ribbons with reasonable values of minority carrier lifetime and saturation current density, but variations are observed related to structural imperfections.